Reentrant peak effect and melting of a flux line lattice in 2H-NbSe2

被引：85

作者：

Ghosh, K

Ramakrishnan, S

Grover, AK

Menon, GI

Chandra, G

Rao, TVC

Ravikumar, G

Mishra, PK

Sahni, VC

Tomy, CV

Balakrishnan, G

Paul, DM

Bhattacharya, S

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,MAHARASHTRA,INDIA

[2] BHABHA ATOM RES CTR,DIV SOLID STATE PHYS,BOMBAY 400085,MAHARASHTRA,INDIA

[3] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

[4] NEC RES INST,PRINCETON,NJ 08540

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.76.4600

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A reentrant peak effect is observed through low held ac susceptibility measurements on the weakly pinned flux line lattice in single crystals of 2H-NbSe2. The resulting phase diagram of the peak effect is strikingly similar to the theoretically predicted reentrant phase boundary which separates flux lattice and flux liquid phases. The broadening and ultimate disappearance of the peak effect at very low fields is consistent with the predicted crossover to a disordered glassy state in this field regime.

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页码：4600 / 4603

页数：4

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