Current-controlled bi-stable domain configurations in Ni81Fe19 elements:: An approach to magnetic memory devices

被引:48
作者
Koo, H
Krafft, C
Gomez, RD [1 ]
机构
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
[2] Lab Phys Sci, College Pk, MD 20740 USA
关键词
D O I
10.1063/1.1495883
中图分类号
O59 [应用物理学];
学科分类号
摘要
The discovery of current-switchable bi-stable remanent domain configurations on small ferromagnetic islands is reported. Rectangular NiFe islands with a thickness of 50 to 100 nm and lateral dimensions on the order of several microns were imaged using magnetic force microscopy after application of 10 ns current pulses through the material. The closure configuration can be set into either the 4 or 7 domain configuration by applying positive or negative current polarity at density on the order 10(7) A/cm(2). The chirality of the closure patterns is fixed, implying that only two rather than four states are stable in these patterns. The possibility of using these configurations as a means of storing a logic state for memory applications is discussed. (C) 2002 American Institute of Physics.
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页码:862 / 864
页数:3
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