AlGaN ultraviolet detectors

被引:15
作者
Razeghi, M
Rogalski, A
机构
来源
PHOTODETECTORS: MATERIALS AND DEVICES II | 1997年 / 2999卷
关键词
ultraviolet detectors; theory of photodetectors; AlGaN photoresistors; photodiodes; and M-S detectors;
D O I
10.1117/12.271196
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
Hitherto, the semiconductor ultraviolet (UV) detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide-band-gap semiconductors between them the most promising are diamond and AlGaN. The latest progress in development of AlGaN UV detectors (photoresistors, photodiodes and Schottky barrier detectors) is described in detail.
引用
收藏
页码:275 / 286
页数:12
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