Theoretical studies on 100 dislocations in single crystal CVD diamond

被引:30
作者
Fujita, N. [1 ]
Blumenau, A. T.
Jones, R.
Oberg, S.
Briddon, P. R.
机构
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Max Planck Inst Eisenforsch GmbH, D-40237 Dusseldorf, Germany
[3] Umea Univ, Dept Math & HPC2N, S-90187 Umea, Sweden
[4] Univ Newcastle Upon Tyne, Sch Nat Sci, Phys Ctr, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 12期
关键词
D O I
10.1002/pssa.200671102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dislocations are common defects in both natural as well as in CVD-grown diamond. Recent advances in the growth of high quality single crystal CVD diamond have led to an increased interest in the atomistic and electronic structure of < 100 > dislocations. These dislocations are observed as mixed-type 45 degrees and pure edge dislocations. Hence in this work we present ab initio modelling studies on these two types of dislocations. The 45 degrees dislocation is found to be by far more stable than the pure edge and both dislocations lead to states in the electronic band gap. An alternative structure for the mixed-type dislocation, which is not straight but kinked and consists of short edge and screw segments, was found slightly higher in energy than the straight structure. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:3070 / 3075
页数:6
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