Metal-metal epitaxy on silicon: Cu/Ni/Cu ultrathin films on 7 x 7-Si(111)

被引：10

作者：

Gubbiotti, G

Carlotti, G

Minarini, C

Loreti, S

Gunnella, R

De Crescenzi, M

机构：

[1] Ist Nazl Fis Nucl, Dipartimento Fis, I-06100 Perugia, Italy

[2] CR ENEA, I-80055 Naples, Italy

[3] CR ENEA Casaccia, I-00060 Rome, Italy

[4] Ist Nazl Fis Mat, Dipartimento Matemat & Fis, I-62032 Camerino, Italy

来源：

SURFACE SCIENCE | 2000年 / 449卷 / 1-3期

关键词：

epitaxy; low energy electron diffraction (LEED); magnetic films; metal-semiconductor interfaces; nickel; X-ray scattering; diffraction; and reflection;

D O I：

10.1016/S0039-6028(00)00054-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cu/Ti/Cu heterostructures have been in situ deposited on the 7x7 reconstructed Si(111) surface. A number of complementary techniques, such as in situ low-energy, medium-energy and Kikuchi electron diffraction and ex situ N-ray diffraction, were used in order to characterise the growth process and the structural properties of the films. It is found that the growth mode of metallic films is characterised by the presence of twinned islands induced by the 7 x 7 reconstruction of the Si(111) substrate. This work can stimulate further application of the metal-metal epitaxy on silicon to grow high quality ultrathin magnetic films to be integrated in microelectronic devices. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：218 / 226

页数：9

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