Effect of oxygen on transient photoconductivity in thin-film NbxTi1-xO2

被引：36

作者：

Golego, N ^{[1
]}

Studenikin, SA ^{[1
]}

Cocivera, M ^{[1
]}

机构：

[1] Univ Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, Canada

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.61.8262

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transient photoconductivity in thin-film NbxTi1-xO2 and TiO2 was studied as a function of temperature, light intensity, illumination time, and ambient composition in a time range of 10(-2)-10(7) s. Both excitation and relaxation transients were slow and followed a nonexponential rate law. A conductivity model predominantly involving hole capture by O-2(-) at the surface is proposed. It was possible to use a Laplace transform method to determine the free electron density and the photoinduced change in the surface barrier caused by hole capture at the surface. In argon, both the oxygen adsorption rate and the rate at which excess electrons reach the surface may contribute to the decay whereas only the latter may be important in air.

引用

页码：8262 / 8269

页数：8

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