A high-speed, high-sensitivity silicon lateral trench photodetector

被引：37

作者：

Yang, M ^{[1
]}

Rim, K

Rogers, DL

Schaub, JD

Welser, JJ

Kuchta, DM

Boyd, DC

Rodier, F

Rabidoux, PA

Marsh, JT

Ticknor, AD

Yang, QY

Upham, A

Ramac, SC

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Microelect, Hopewell Jct, NY 12533 USA

[3] Altis Semicond, Essonnes Cedex, France

[4] IBM Microelect, Essex Jct, VT 05452 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 07期

关键词：

photodetector; photodiodes; optical receivers; optoelectronic devices; silicon;

D O I：

10.1109/LED.2002.1015212

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a novel silicon lateral trench photodetector that decouples the carrier transit distance from the light absorption depth, enabling both high speed and high responsivity. The photodetector, fabricated with fully VLSI compatible processes, exhibits a 6-dB bandwidth of 1.5 GHz at 3.0 V and an external quantum efficiency of 68% at 845 nm wavelength. A photoreceiver with a wire-bonded lateral trench detector and a BiCMOS trans-impedance amplifier demonstrates excellent operation at 2.5 Gb/s data rate and 845 urn wavelength with only a 3.3 V bias.

引用

页码：395 / 397

页数：3

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