Charge carriers in few-layer graphene films

被引:531
作者
Latil, Sylvain [1 ]
Henrard, Luc [1 ]
机构
[1] Fac Univ Notre Dame Paix, Phys Solide Lab, B-5000 Namur, Belgium
关键词
D O I
10.1103/PhysRevLett.97.036803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The nature of the charge carriers in 2D few-layer graphites (FLGs) has been recently questioned by transport measurements [K. S. Novoselov , Science 306, 666 (2004)] and a strong ambipolar electric field effect has been revealed. Our density functional calculations demonstrate that the electronic band dispersion near the Fermi level, and consequently the nature of the charge carriers, is highly sensitive to the number of layers and the stacking geometry. We show that the experimentally observed ambipolar transport is only possible for an FLG with a Bernal-like stacking pattern, whereas simple-carrier or semiconducting behavior is predicted for other geometries.
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页数:4
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