Ultraviolet free-exciton light emission in Er-passivated SnO2 nanocrystals in silica

被引：40

作者：

Brovelli, S. ^{[1
]}

Chiodini, N. ^{[1
]}

Meinardi, F. ^{[1
]}

Lauria, A. ^{[1
]}

Paleari, A. ^{[1
]}

机构：

[1] Univ Milano Bicocca, Consorzio Nazl Interuniv Sci Fis Mat, CNISM, Dept Mat Sci, I-20125 Milan, Italy

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期

关键词：

D O I：

10.1063/1.2362583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SnO2 nanocrystals are grown in silica starting from a sol-gel method and using Er doping to passivate the cluster boundaries. As a result, emission at 3.8 eV from the decay of SnO2 free excitons is observed in nanostructured SnO2:SiO2, besides the extrinsic 2 eV luminescence of defects in SnO2 and ascribable to substoichiometric nanocluster boundaries. The analysis of the extrinsic emission competitive with the ultraviolet (UV) luminescence evidences the involvement of a phonon mode at 210 cm(-1) from a SnO-like phase. The feasibility of passivated wide-band-gap nanocrystals in silica gives interesting perspectives for UV-emitting optical devices. (c) 2006 American Institute of Physics.

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