A practical technology path to sub-0.10 micron process generations via enhanced optical lithography

An envisioned technology path to sub-0.1 mu m process generations is first presented. OPC, PSM, and custom illumination apertures are all able to enhance the performance of the optical lithography. By integrating the use of these resolution enhancement technologies, it is possible to develop a production-worthy process that has sufficient overlapping process windows for all feature pitches. Critical dimension control is the key issue for sub-h process generations. The potential causes that can undermine CD control are discussed, and methods to minimize the problem are proposed. In addition to printing ploy gate features, a method to print sub-h contact/via hole features is described. An outlook for meeting the technology challenges is discussed with conclusions.