Position of the Fermi level on an indium arsenide surface treated in sulfur vapor

被引：12

作者：

Bezryadin, NN ^{[1
]}

Tatokhin, EA

Budanov, AV

Linnik, AV

Arsent'ev, IN

机构：

[1] Voronezh State Technol Acad, Voronezh 394017, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 12期

关键词：

D O I：

10.1134/1.1187912

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The characteristic features of the formation kinetics of In2S3 layers on indium arsenide substrates by heterovalent substitution are studied. The activation energies of two steps in this process are separated and determined. The variation of the position of the Fermi level on an InAs surface during treatment in sulfur vapor is recorded by measuring the thermodynamic work function using the Kelvin probe method. (C) 1999 American Institute of Physics. [S1063-7826(99)01012-1].

引用

页码：1301 / 1303

页数：3

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