Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties

被引：1005

作者：

Li, Y

Meng, GW

Zhang, LD

Phillipp, F

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China

[2] Max Planck Inst Met Forsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 15期

关键词：

D O I：

10.1063/1.126238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated by generating alumina templates with nanochannels, electrodepositing Zn in them, and then oxidizing the Zn nanowire arrays. The polycrystalline ZnO nanowires with the diameters ranging from 15 to 90 nm were uniformly assembled into the hexagonally ordered nanochannels of the AAM. Photoluminescence (PL) measurements show a blue PL band in the wavelength range of 450-650 nm caused by the singly ionized oxygen vacancy in ZnO nanowires. (C) 2000 American Institute of Physics. [S0003-6951(00)01415-7].

引用

页码：2011 / 2013

页数：3

共 20 条

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