Dislocation core spreading at interfaces between metal films and amorphous substrates

Experiments with transmission electron microscopy have shown that in a strong electron beam the contrast of dislocations may gradually disappear at an incoherent interface between a metal thin film and an amorphous substrate. There are reasons to believe that this phenomenon is caused by radiation-induced dislocation core spreading at the interface. A quantitative model accounting for this effect will be necessary for a better understanding of dislocation structures and plastic deformation in metal thin films. As a first step toward this objective, we develop a number of mathematical solutions for dislocation core spreading at an incoherent interface. For simplicity, we consider screw dislocations, and consider the interface to be characterized by a shear, adhesive strength, tauo, below which no core spreading occurs, and above which spreading takes place in a viscous manner. We determine the final equilibrium core width and the rate of core spreading for single or planar arrays of dislocations in a homogeneous bulk material or at the interface between a thin film and a semi-infinite substrate where the film and substrate may have the same, or different, elastic constants. Some of our solutions are analytic and others are based on an implicit finite difference method with a Gauss-Chebyshev quadrature scheme. The phenomenon of dislocation core spreading is expected to have a dramatic effect on the strength of crystalline films deposited on amorphous substrates. (C) 2002 Elsevier Science Ltd. All rights reserved.