29Si hyperfine structure of the E′α center in amorphous silicon dioxide

被引：31

作者：

Buscarino, G. ^{[1
]}

Agnello, S. ^{[1
]}

Gelardi, F. M. ^{[1
]}

机构：

[1] Univ Palermo, Dept Phys & Astron Sci, I-90123 Palermo, Italy

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 13期

关键词：

17;

D O I：

10.1103/PhysRevLett.97.135502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a study by electron paramagnetic resonance on the E(alpha)(') point defect in amorphous silicon dioxide (a-SiO(2)). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the (29)Si hyperfine structure of the E(alpha)(') consists of a pair of lines split by similar to 49 mT. On the basis of the experimental results, a microscopic model is proposed for the E(alpha)(') center, consisting of a hole trapped in an oxygen vacancy with the unpaired electron sp(3) orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO(2) matrix.

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页数：4

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