Highly anisotropic crystal growth and thermoelectric properties of K2Bi8-xSbxSe13 solid solutions:: Band gap anomaly at low x

被引:38
作者
Kyratsi, T [1 ]
Dyck, JS
Chen, W
Chung, DY
Uher, C
Paraskevopoulos, KM
Kanatzidis, MG
机构
[1] Michigan State Univ, Dept Chem, E Lansing, MI 48824 USA
[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[3] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54006, Greece
关键词
Selenium compounds - Thermoelectric equipment - Thermal conductivity - Anisotropy - Antimony compounds - Bismuth compounds - Metal castings - Potassium compounds - Thermoelectricity - Energy gap;
D O I
10.1063/1.1481967
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thermoelectric properties of solid solutions of the type beta-K2Bi8-xSbxSe13 (0<x<8) were studied with respect to thermal behavior, band gap variation, and charge transport properties as a function of x. At x values between 0 and 1.5, the energy band gap is observed to decrease (anomalous) before it widens with increasing x values as would be expected. For selected members of the solid solutions, the Bridgman technique was applied to obtain well-grown oriented ingots that were used to measure the thermal conductivity and charge transport properties in different growth directions. The measurements showed a strong anisotropy in thermoelectric properties with the largest anisotropy observed in the electrical conductivity. Lattice thermal conductivities of the selected solid solutions were observed to decrease when the x value increases. Preliminary doping studies on the x=1.6 member were carried out and it was shown that it is possible to significantly increase the power factor. (C) 2002 American Institute of Physics.
引用
收藏
页码:965 / 975
页数:11
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