Photoconductivity of highly oriented and randomly oriented diamond films for the detection of fast UV laser pulses

被引:13
作者
Achard, J
Tardieu, A
Kanaev, A
Gicquel, A
Castex, MC
Yokota, Y
Hayashi, K
Tachibana, T
Kobashi, K
机构
[1] Univ Paris 13, CNRS, LIMHP, F-93430 Villetaneuse, France
[2] Univ Paris 13, CNRS, LPL, F-93430 Villetaneuse, France
[3] Kobe Steel Ltd, Elect Res Lab, Nishi Ku, Kobe, Hyogo 6512271, Japan
关键词
detectors; diamond; homoepitaxy; UV range;
D O I
10.1016/S0925-9635(01)00663-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond is a wide band-gap material that, depending on purity may exhibit a short carrier lifetime and because of its strong lattice bonding it generally exhibits a high damage threshold. For these reasons it is considered to be suitable for fast and solar blind UV detectors. The use of highly oriented diamond (HOD) films should be advantageous over randomly oriented diamond (ROD) films because of the lower grain boundary density that should lead to an increase in the carrier mobility. In the present study, we compare the photoresponse of UV detectors made of HOD and ROD films using an ArF excimer pulsed laser and we measure the UV-visible discrimination factor of both types of diamond films using a tunable laser. Because the ROD film available for this study was considerably thinner than the respective HOD film, some of the conclusions of this paper are specific to this particular thickness ratio. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:423 / 426
页数:4
相关论文
共 16 条
[1]   Thin film diamond alpha detectors for dosimetry applications [J].
Bergonzo, P ;
Foulon, F ;
Marshall, RD ;
Jany, C ;
Brambilla, A ;
McKeag, RD ;
Jackman, RB .
DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) :952-955
[2]   CVD diamond films as photon detectors [J].
Galluzzi, F ;
Marinelli, M ;
Masotti, L ;
Milani, E ;
Pace, E ;
Rossi, MC ;
Salvatori, S ;
Santoro, M ;
Sciortino, S ;
Rinati, GV .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 409 (1-3) :423-425
[3]   Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films [J].
Hayashi, K ;
Yamanaka, S ;
Watanabe, H ;
Sekiguchi, T ;
Okushi, H ;
Kajimura, K .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) :744-753
[4]   Comparison of diamond and silicon ultraviolet photodetectors [J].
Hiscock, J ;
Collins, AT .
DIAMOND AND RELATED MATERIALS, 1999, 8 (8-9) :1753-1758
[5]   Influence of the growth parameters on the electrical properties of thin polycrystalline CVD diamond films [J].
Jany, C ;
Tardieu, A ;
Gicquel, A ;
Bergonzo, P ;
Foulon, F .
DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) :1086-1090
[6]   Diamond deep UV photodetectors: reducing charge decay times for 1-kHz operation [J].
Lansley, SP ;
Gaudin, O ;
Whitfield, MD ;
McKeag, RD ;
Rizvi, N ;
Jackman, RB .
DIAMOND AND RELATED MATERIALS, 2000, 9 (02) :195-200
[7]   Methane-induced texturing of chemical vapor deposition diamond films and correlation with UV photoresponse [J].
Marinelli, M ;
Milani, E ;
Pace, E ;
Paoletti, A ;
Santoro, M ;
Sciortino, S ;
Tucciarone, A ;
Verona-Rinati, G .
DIAMOND AND RELATED MATERIALS, 1998, 7 (07) :1039-1042
[8]   POLYCRYSTALLINE DIAMOND PHOTOCONDUCTIVE DEVICE WITH HIGH UV-VISIBLE DISCRIMINATION [J].
MCKEAG, RD ;
CHAN, SSM ;
JACKMAN, RB .
APPLIED PHYSICS LETTERS, 1995, 67 (15) :2117-2119
[9]  
Pan L. S., 1995, DIAMOND ELECT PROPER
[10]  
PAN LS, 1991, SCIENCE, V255, P833