Electroluminescent measurement of the internal quantum efficiency of light emitting diodes

被引：25

作者：

Getty, Amorette ^{[1
]}

Matioli, Elison ^{[1
]}

Iza, Michael ^{[1
]}

Weisbuch, Claude ^{[1
,2
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Ecole Polytech, Phys Mat Condensee Lab, F-91128 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 18期

基金：

美国国家科学基金会;

关键词：

current density; electroluminescent devices; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors;

D O I：

10.1063/1.3129866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An experimental method is demonstrated for the determination of internal quantum efficiency (IQE) in III-nitride-based light-emitting diodes (LEDs). LED devices surrounded with an optically absorbing material have been fabricated to limit collected light to photons emitted directly from the quantum wells across a known fraction of the recombination area. The emission pattern for this device configuration was modeled to estimate the extraction efficiency. IQE can then be calculated from the measured input current and output power. This method was applied to c-plane In(x)Ga(1-x)N-based LEDs emitting at 445 nm. Initial measurements estimate an IQE of 43%+/- 1% at a current density of 7.9 A/cm(2).

引用

页数：3

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