Complete characterization of AlxGa1-xN/InxGa1-xN/GaN devices by SIMS

被引：1

作者：

Huang, C

Mitha, S

Erickson, JW

ClarkPhelps, R

Sheng, J

Gao, Y

机构：

来源：

GALLIUM NITRIDE AND RELATED MATERIALS II | 1997年 / 468卷

关键词：

D O I：

10.1557/PROC-468-281

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SIMS analysis was applied to the characterization of GaN, AlGaN/GaN and InGaN/GaN grown by MOCVD. Such characterization enables the control of purity and doping, and the determination of growth rate and alloy composition. The analysis can be performed on finished optoelectronic and electronic devices and this makes SIMS technique a powerful tool for failure analysis, reverse engineering, and concurrent engineering.

引用

页码：281 / 285

页数：5