Large area ZnO films optimized for graded band-gap Cu(InGa)Se-2-based thin-film mini-modules

被引：41

作者：

Cooray, NF ^{[1
]}

Kushiya, K ^{[1
]}

Fujimaki, A ^{[1
]}

Sugiyama, I ^{[1
]}

Miura, T ^{[1
]}

Okumura, D ^{[1
]}

Sato, M ^{[1
]}

Ooshita, M ^{[1
]}

Yamase, O ^{[1
]}

机构：

[1] SHOWA SHELL SEKIYU KK,CENT R&D LAB,ATSUGI,KANAGAWA 2432,JAPAN

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1997年 / 49卷 / 1-4期

关键词：

ZnO films; Cu(InGa)Se-2; thin film; mini-modules;

D O I：

10.1016/S0927-0248(97)00055-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this study, two deposition methods (i.e. MOCVD and sputtering methods) to prepare n-type ZnO window layers for CIGS-based thin-film solar cells are discussed. In order to make ZnO:Al transparent conductive oxide (TCO) films prepared by DC magnetron sputtering comparable to ZnO : BTCO prepared by MOCVD, a new ZnO sputtering process is proposed by introducing a multilayer structure. Using these films, CIGS thin-film solar cells with efficiencies of greater than 14% have been fabricated with an active area of 3.2 cm(2). This structure was adapted to fabricate CIGS thin-film mini-modules with efficiencies around 11% having aperture area of 50 cm(2).

引用

页码：291 / 297

页数：7

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