The growth of sub-micron films of TPA-silicalite-1 on single crystal silicon wafers from low-temperature clear solutions

The direct synthesis of thin films of crystalline silicalite-1 upon single crystal silicon wafers at a crystallization temperature of 100 degrees C has been investigated by varying the composition of the clear tetrapropylammonium (TPA) silicate synthesis solutions. Synthesis mixture compositions known to yield monodisperse colloidal crystals of TPA-silicalite-1 upon hydrothermal treatment as well as those reported to yield silicalite-1 films at higher temperatures have been found not suitable for the preparation of silicalite-1 films at 100 degrees C. Lower crystal growth rates and smaller thicknesses of the gel film that forms on the wafer at this temperature decrease the tolerance to alkalinity, resulting in etching via the consumption of the gel layer before the growing crystals succeed in forming a closed film followed by the removal of the protective silicon oxide film on the wafer. Thin oriented silicalite-1 films with thicknesses in the range of 180 nm to 1 mu m have been obtained by varying the alkalinity and water, the TPA, and the silica contents of the reaction mixture. Lower alkalinities and higher silica concentrations favor the formation of a thicker amorphous gel layer. Although increased TPA(+) concentrations at constant alkalinity increase the number of nuclei that form on this layer, higher TPA(+) concentrations have been observed to be required at higher alkalinities to achieve similar rates of nucleation. Rinsing the wafer surfaces initially with a 0.025 M TPAOH solution before rinsing with water and acetone produces cleaner surfaces free of post-treatment artifacts. (C) Elsevier Science Inc. 1997.