Silver ion implantation in epitaxial La2/3Ca1/3MnO3 thin films:: Large temperature coefficient of resistance for bolometric applications

被引：49

作者：

Bathe, R ^{[1
]}

Adhi, KP

Patil, SI

Marest, G

Hannoyer, B

Ogale, SB

机构：

[1] Univ Pune, Dept Phys, Ctr Adv Studies Mat Sci & Solid State Phys, Pune 411007, Maharashtra, India

[2] Inst Phys Nucl Lyon, IN2P3, F-69622 Villeurbanne, France

[3] Univ Lyon 1, F-69622 Villeurbanne, France

[4] Univ Rouen, LASTSM IUT, F-76821 Mt St Aignan, France

[5] Univ Maryland, Dept Phys, Ctr Superconduct Res, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 15期

关键词：

D O I：

10.1063/1.126269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial films of La2/3Ca1/3MnO3 were successively implanted with 100 and 200 keV silver ions at fluences of 4.5 x 10(15) and 1 x 10(16) ions/cm(2), respectively, to achieve a fairly uniform implant distribution. The as-implanted films are insulating and do not show a metal-insulator transition. Postimplantation annealing at 950 degrees C shows a recovery of the high structural quality of the films, along with an increase in the metal-insulator transition temperature (T-p), magnetoresistance, and the peak temperature coefficient of resistance (TCR) at the transition. The peak TCR of 23% for manganite films is clearly significant for bolometric applications. (C) 2000 American Institute of Physics. [S0003-6951(00)01315-2].

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页码：2104 / 2106

页数：3

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