Fabrication and characterization of p-Si/n-ZnO heterostructured junctions

被引：79

作者：

Klason, P. ^{[1
]}

Rahman, M. M. ^{[1
]}

Hu, Q. -H. ^{[1
]}

Nur, O. ^{[2
]}

Turan, R. ^{[3
]}

Willander, M. ^{[1
,2
]}

机构：

[1] Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden

[2] Linkoping Univ, Dept Sci & Technol, SE-60174 Norrkoping, Sweden

[3] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey

来源：

MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 4-5期

关键词：

ZnO; II-VI semiconductor; Current-voltage; Nanostructure; Heterojunction;

D O I：

10.1016/j.mejo.2008.07.070

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper ZnO nanorods and nanodots (with and without a SiO2 buffer layer) were grown on p-Si, forming p-n heterojunctions. The nanorod devices showed no visible electroluminescence (EL) emission but showed rectifying behavior. Covering around 60% of the length of the nanorods with PMMA produced an ideality factor of 3.91 +/- 0.11 together with a reverse saturation current of 6.53 +/- 4.2 x 10(-8) A. Up to two orders of magnitude rectification was observed for the current at bias -3 and 3 V. The nanodot devices showed EL emission under forward bias conditions. It seems that the buffer layer increased both the stability and efficiency of the devices, since the buffer layer device could operate at larger applied voltage and showed EL emission under reverse bias. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：706 / 710

页数：5

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