A Bicontinuous Double Gyroid Hybrid Solar Cell

被引：418

作者：

Crossland, Edward J. W. ^{[1
,2
,3
]}

Kamperman, Marleen ^{[4
]}

Nedelcu, Mihaela ^{[1
,2
]}

Ducati, Caterina ^{[5
]}

Wiesner, Ulrich ^{[4
]}

Smilgies, Detlef -M. ^{[6
]}

Toombes, Gilman E. S. ^{[7
]}

Hillmyer, Marc A. ^{[8
]}

Ludwigs, Sabine ^{[1
,2
,9
,10
]}

Steiner, Ullrich ^{[1
,2
]}

Snaith, Henry J. ^{[11
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England

[2] Univ Cambridge, Nanosci Ctr, Cambridge CB3 0FF, England

[3] Univ Freiburg, Freiburg Inst Adv Studies, D-79104 Freiburg, Germany

[4] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[5] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[6] Cornell Univ, Cornell High Energy Synchrotron Source CHESS, Ithaca, NY 14853 USA

[7] CNRS, Phys Chem UMR 168, Inst Curie, F-75005 Paris, France

[8] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA

[9] Univ Freiburg, Inst Macromol Chem, D-79104 Freiburg, Germany

[10] Univ Freiburg, Freiburg Mat Res Ctr, D-79104 Freiburg, Germany

[11] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

来源：

NANO LETTERS | 2009年 / 9卷 / 08期

基金：

英国工程与自然科学研究理事会; 美国国家科学基金会;

关键词：

X-RAY-SCATTERING; GRAZING-INCIDENCE; HIGH-EFFICIENCY; CROSS-SECTION; THIN-FILMS; MORPHOLOGY; TRANSPORT; SILICA;

D O I：

10.1021/nl803174p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the first successful application of an ordered bicontinuous gyroid semiconducting network in a hybrid bulk heterojunction solar cell. The freestanding gyroid network is fabricated by electrochemical deposition into the 10 nm wide voided channels of a self-assembled, selectively degradable block copolymer film. The highly ordered pore structure is ideal for uniform infiltration of an organic hole transporting material, and solid-state dye-sensitized solar cells only 400 nm thick exhibit up to 1.7% power conversion efficiency. This patterning technique can be readily extended to other promising heterojunction systems and is a major step toward realizing the full potential of self-assembly in the next generation of device technologies.

引用

页码：2807 / 2812

页数：6

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