MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications

Lithium gallate is receiving ever increasing attention as a possible candidate for III-nitride material growth due to its superior lattice match. This paper summarizes the recent, promising results from material growths on lithium gallate including aluminum, gallium and indium-nitride alloys. Structural, optical and electrical diagnostics are presented. The use of this material could result in significant advantages for use in power electronic applications. Specifically. the present material quality is in some ways, superior to all other current substrate technologies since Very high quality, extremely thin nitride material can be produced. The areas for which lithium gallate still lags other technologies is also discussed. Issues that directly effect electronic devices, such as overcoming the limited thermal conductivity via heat pipes or substrate removal, the possibilities of achieving higher p-type doping and higher indium concentrations through the use of low growth temperatures, obtaining single polarity material with nearly no mosaic spread in grain orientation, along with issues of substrate cost are discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.