Nanoscale backswitched domain patterning in lithium niobate

被引：127

作者：

Shur, VY ^{[1
]}

Rumyantsev, EL

Nikolaeva, EV

Shishkin, EI

Fursov, DV

Batchko, RG

Eyres, LA

Fejer, MM

Byer, RL

机构：

[1] Ural State Univ, Inst Phys & Appl Math, Ekaterinburg 620083, Russia

[2] Stanford Univ, Edward L Ginzton Lab, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 02期

关键词：

D O I：

10.1063/1.125683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a promising method of nanoscale domain engineering, which allows us to fabricate regular nanoscale domain patterns consisting of strictly oriented arrays of nanodomains (diameter down to 30 nm and density up to 100 mu m(-2)) in lithium niobate. We produce submicron domain patterns through multiplication of the domain spatial frequency as compared with the electrode one. The fabrication techniques are based on controlled backswitched poling. (C) 2000 American Institute of Physics. [S0003-6951(00)01402-9].

引用

页码：143 / 145

页数：3

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