Through wafer interconnects on active pmos devices

被引：4

作者：

Johnson, VN ^{[1
]}

Jozwiak, J ^{[1
]}

Moll, A ^{[1
]}

机构：

[1] Boise State Univ, Coll Engn, Boise, ID 83725 USA

来源：

2004 IEEE WORKSHOP ON MICROELECTRONIC AND ELECTRON DEVICES | 2004年

关键词：

D O I：

10.1109/WMED.2004.1297358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The objective of this research is to demonstrate the ability to create Through-Wafer Interconnects (TWI's) on wafers with active devices. TWI's have previously been demonstrated on blank Si wafers. The application of TWI's in an industrial setting requires no damage or yield loss to the existing devices during additional processing steps. The test vehicle chosen is a simple pMOS test chip, which includes different structures such as transistors and invertors. The processing steps and sequence required to integrate TWI's into wafers with active devices will be demonstrated.

引用

页码：82 / 84

页数：3