A new poly-Si TFT current-mirror pixel for active matrix organic light emitting diode

被引：77

作者：

Lee, Jae-Hoon ^{[1
]}

Nam, Woo-Jin

Kim, Byeong-Koo

Choi, Hong-Seok

Ha, Yong-Min

Han, Min-Koo

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

[2] LG Philips LCD Co Ltd, Gyungbuk, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 10期

关键词：

data-current scaling; pixel circuit; poly-Si thinfilm transistor (TFT);

D O I：

10.1109/LED.2006.883056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new poly-Si thin-film-transistor (TFT) current-mirror-active-matrix-organic-light-emitting-diode (AMOLED) pixel, which successfully compensates for the I variation of the threshold voltage as well as mobility in the excimer laser annealed poly-Si TFT pixel, is designed and fabricated. The OLED current (I-OLED) of the proposed pixel does not depend on the operating temperature. When the temperature of pixel is increased from 27 degrees C to 60 degrees C, the IOLED of the new pixel circuit composed of four TFTs and one capacitor increases only about 1.5%, while that of a conventional pixel composed of two TFTs and one capacitor increases about 37%. At room temperature, nonuniformity of the IOLED in the proposed circuit was also considerably suppressed at around 9%. We have successfully fabricated a 1.2-in AMOLED panel (96 x 96 x red green blue)to evaluate the performance of the proposed pixel. A troublesome residual image caused by the hysteresis phenomenon of the poly-Si TFT was almost eliminated in the proposed AMOLED panel as a result of current programming.

引用

页码：830 / 833

页数：4

共 13 条

[1]

BAE SJ, 2000, P INT DISPL RES C, P358

[2]

CHOI SM, 2004, P SID S DIG, P260

[3] The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays [J].

Dawson, RMA ;

Shen, Z ;

Furst, DA ;

Connor, S ;

Hsu, J ;

Kane, MG ;

Stewart, RG ;

Ipri, A ;

King, CN ;

Green, PJ ;

Flegal, RT ;

Pearson, S ;

Barrow, WA ;

Dickey, E ;

Ping, K ;

Robinson, S ;

Tang, CW ;

Van Slyke, S ;

Chen, F ;

Shi, J ;

Lu, MH ;

Sturm, JC .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :875-878

[4] AMOLED (active matrix OLED) functionality and usable lifetime at temperature [J].

Fellowes, DA ;

Wood, MV ;

Prache, O ;

Jones, S .

Helmet- and Head-Mounted Displays X: Technologies and Applications, 2005, 5800 :138-149

[5] Temperature dependence of the transfer characteristics of polysilicon thin film transistors fabricated by excimer laser crystallization [J].

Foglietti, V ;

Mariucci, L ;

Fortunato, G .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :616-618

[6] A new pixel circuit for active matrix organic light emitting diodes [J].

Goh, JC ;

Chung, HJ ;

Jang, J ;

Han, CH .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (09) :544-546

[7]

HATTORI R, 2002, P INT WORKSH AMLCD D, P17

[8] Four-thin film transistor pixel electrode circuits for active-matrix organic light-emitting displays [J].

He, Y ;

Hattori, R ;

Kanicki, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3A) :1199-1208

[9] A new voltage-modulated AMOLED pixel design compensating for threshold voltage variation in poly-Si TFTs [J].

Jung, SH ;

Nam, WJ ;

Han, MK .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (10) :690-692

[10] Recoverable residual image induced by hysteresis of thin film transistors in active matrix organic light emitting diode displays [J].

Kim, BK ;

Kim, O ;

Chung, HJ ;

Chang, JW ;

Ha, YM .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (4A) :L482-L485

← 1 2 →