Structure of clean and arsenic-covered GaN(0001) surfaces

被引：40

作者：

Ramachandran, V

Lee, CD

Feenstra, RM

Smith, AR ^{[1
]}

Northrup, JE

Greve, DW

机构：

[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA

[2] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[3] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[4] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

GaN; arsenic; surface; 2; x; RHEED; Auger;

D O I：

10.1016/S0022-0248(99)00570-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of trace arsenic on the growth and surface structure of GaN(0 0 0 1) has been studied. We find that a partial pressure of only 10(-9) Torr of arsenic during molecular beam epitaxial growth significantly modifies the growth kinetics. Such a small background pressure of arsenic leads to an arsenic-terminated surface displaying a 2 x 2 reconstruction during growth which is absent for the clean surface. First-principles theoretical calculations show that As-terminated surfaces an energetically more favorable than Ga-terminated surfaces for arsenic pressures of 10(-9) Torr, and structural models for the As-adatom 2 x 2 reconstruction are presented. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：355 / 363

页数：9

共 28 条

[1] The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation [J].