Room temperature synthesis of carbon nanofibers containing nitrogen by plasma-enhanced chemical vapor deposition

被引:48
作者
Minea, TM [1 ]
Point, S
Granier, A
Touzeau, M
机构
[1] Univ Nantes, IMN, LPCM, CNRS,UMR 6502, F-44322 Nantes, France
[2] Univ Paris 11, LPGP, CNRS, UMR 8578, F-91405 Orsay, France
关键词
D O I
10.1063/1.1781352
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter reports low-pressure, room-temperature growth of carbon nanofibers containing nitrogen by plasma chemical vapor deposition arrangement. By alternating pure acetylene plasma and afterglow pure nitrogen high dense plasma, a fine control of the fibers growth kinetic is obtained. This layer-by-layer deposition technique takes advantage of nitrogen chemical etching effects during the growth of nitrogen-doped carbon nanofibers. (C) 2004 American Institute of Physics.
引用
收藏
页码:1244 / 1246
页数:3
相关论文
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