Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE

被引：8

作者：

Jaumann, M

Stimmer, J

Schittenhelm, P

Nutzel, JF

Abstreiter, G

Neufeld, E

Hollander, B

Buchal, C

机构：

[1] TECH UNIV MUNCHEN WEIHENSTEPHAN, WALTER SCHOTTKY INST, D-85748 GARCHING, GERMANY

[2] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, ISI2, D-52425 JULICH, GERMANY

来源：

APPLIED SURFACE SCIENCE | 1996年 / 102卷

关键词：

D O I：

10.1016/0169-4332(96)00095-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated the room temperature electroluminescence of Er doped silicon diodes codoped with O or F as a function of dopant concentration and annealing conditions. Samples with Er concentrations of 5 x 10(17) cm(-3) and 10(18) cm(-3) show the most luminescence at lambda = 1.54 mu m. In case of F codoping the Er3+ peak intensity at 300 K is weak and there is a strong defect related peak at about the same wavelength.

引用

页码：327 / 330

页数：4