A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics

被引：82

作者：

Chen, F ^{[1
]}

Bin, X ^{[1
]}

Hella, C ^{[1
]}

Shi, X ^{[1
]}

Gladfelter, WL ^{[1
]}

Campbell, SA ^{[1
]}

机构：

[1] Univ Minnesota, Minneapolis, MN 55455 USA

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 72卷 / 1-4期

关键词：

MOSFET dielectric high-k;

D O I：

10.1016/j.mee.2004.01.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hf(x)Ti(1-x)O(2) films have been deposited by chemical vapor deposition. Permittivities of approximately 50 have been obtained. The films are stable up to 1000 degreesC. The interface properties and charge trapping appear to depend on composition. For films with approximately equal Hf and Ti concentration, transistor characteristics and inversion layer mobilities are comparable to those obtained when using pure HfO(2). (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：263 / 266

页数：4

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