Calculation and experimental characterization of the defect physics in CuInSe2

被引：7

作者：

Klais, J

Möller, HJ

Cahen, D

机构：

[1] TU Bergakad Freiberg, Inst Phys Expt, D-09596 Freiberg, Germany

[2] Weizmann Inst Sci, Mat & Interfaces Dept, IL-76100 Rehovot, Israel

来源：

THIN SOLID FILMS | 2000年 / 361卷

关键词：

CuInSe2; positron lifetime; formation energy; energy level; stoichiometry; intrinsic defects;

D O I：

10.1016/S0040-6090(99)00814-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Numerical simulations of the defect distribution of CuInSe2 were carried out as a function of the stoichiometry. The simulations are based on a new calculation of the intrinsic defects in this material. The results of the calculations were compared with earlier electrical and positron lifetime measurements. This leads to the assumption, that the single defects V-Se, V-Cu, Cu-1n and the defect pair (2V(Cu)-In-Cu) occur in the investigated specimens in considerable concentrations. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：446 / 449

页数：4

共 15 条

[1] POSITRON STATES IN IONIC MEDIA [J].

BERTOLACCINI, M ;

BISI, A ;

GAMBARINI, G ;

ZAPPA, L .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (06) :734-+

[2] POSITRON DYNAMICS IN SOLIDS [J].

BRANDT, W .

APPLIED PHYSICS, 1974, 5 (01) :1-23

[3] GENERALIZED-APPROACH TO THE DEFECT CHEMISTRY OF TERNARY COMPOUNDS [J].

GROENINK, JA ;

JANSE, PH .

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1978, 110 (01) :17-28

[4]

Klais J, 1998, INST PHYS CONF SER, V152, P741

[5]

Kroger F.A., 1973, CHEM IMPERFECT CRYST

[6]

KROGER FA, 1956, SOLID STATE PHYS, V3, P307

[7]

MOLLER HJ, 1993, SEMICONDUCTORS SOLAR, P300

[8]

NEUMANN H, 1986, GEEST PORTIG LEIPZIG, P406

[9]

NIKI S, 1998, 2 WORLD C PVSEC WIEN, P616

[10] Study of defects in electron irradiated CuInSe2 by positron lifetime spectroscopy [J].

Polity, A ;

Krause-Rehberg, R ;

Staab, TEM ;

Puska, MJ ;

Klais, J ;

Moller, HJ ;

Meyer, BK .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) :71-78

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