Solution-processable field-effect transistor using a fluorene- and selenophene-based copolymer as an active layer

被引:84
作者
Kim, Young Mi
Lim, Eunhee
Kang, In-Nam
Jung, Byung-Jun
Lee, Jaemin
Koo, Bon Won
Do, Lee-Mi
Shim, Hong-Ku [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, Sch Mol Sci BK21, Taejon 305701, South Korea
[3] Catholic Univ Korea, Puchon 420743, Gyeonggi Do, South Korea
[4] Samsung Adv Inst Technol, Yongin 449712, Gyeonggi Do, South Korea
[5] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea
关键词
D O I
10.1021/ma060567l
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
We have synthesized a new p-type polymer, poly(9,9'-n-dioctylfluorene-alt-biselenophene) (F8Se2), via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weight (M-n) of F8Se2 was found to be 72 600. F8Se2 dissolves in common organic solvents such as chloroform and chlorobenzene. The PL emission peak of a film of F8Se2 is clearly red-shifted with respect to that of its sulfur analogue, poly(9,9'-n-dioctylfluorenealt- bithiophene) (F8T2), due to the electron-donating properties of selenium and the strong interactions between the biselenophene moieties in neighboring copolymer chains. We confirmed that F8Se2 is a thermotropic liquid crystalline polymer with an aligned structure by carrying out DSC, PLM, and XRD measurements. The introduction of the selenophene moiety into the liquid-crystalline polymer system results in better field-effect transistor (FET) performance than that of F8T2. A solution-processed F8Se2 FET device with a bottom contact geometry was found to exhibit a hole mobility of 0.012 cm(2)/(V s) and a low threshold voltage of - 4 V, which is the one of the highest solution-processable FET performances.
引用
收藏
页码:4081 / 4085
页数:5
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