On the degradation of some thiophene oligomers after doping by ion chloride

被引:13
作者
Bernede, JC [1 ]
Tregouet, Y [1 ]
Gourmelon, E [1 ]
Martinez, F [1 ]
Neculqueo, G [1 ]
机构
[1] UNIV CHILE,FAC CIENCIAS FIS & MATEMAT,DEPT QUIM BASICA,SANTIAGO,CHILE
关键词
D O I
10.1016/S0141-3910(96)00110-3
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
FeCl3-doped thiophene oligomers (bi, ter, tetra, penta) in the powder form have been characterized by photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), electron microprobe analysis, visible optical absorption, infrared absorption (FTIR) and electron spin resonance (ESR). The results show that even if the powders are only lightly doped, the chlorine dopant is only partly ionized (80 at.%). The positive charge induced by doping cannot be localized on sulphur, but probably can be localized on carbon. Since the doping is not large, the signal may be too small on sulphur to be detected by XPS, however, the ESR signal cannot be attributed to the S radical and we can imagine that the positive charge induced by doping is localized on carbon. The distribution of the dopant in the powder is not homogeneous. All the experimental results show that while the doping is not strong it has many consequences for the properties of the powder. The main one, corroborated by all the experiments, is that after doping there is a degradation of the bi- and terthiophene. We no longer have any bi- and terthiophene but x-thiophene with x greater than or equal to 5; tetra- and pentathiophene are not modified. (C) 1996 Elsevier Science Limited
引用
收藏
页码:55 / 64
页数:10
相关论文
共 23 条
[1]  
BEAMON G, 1993, HIGH RESOLUTION XPS
[2]   ESR AND ENDOR STUDIES OF ION FORMATION IN X-IRRADIATED THIODIGLYCOLLIC ACID [J].
BOX, HC ;
FREUND, HG ;
BUDZINSKI, EE .
JOURNAL OF CHEMICAL PHYSICS, 1968, 49 (09) :3974-+
[3]   METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY-TYPE DIODES OF DOPED THIOPHENE OLIGOMERS [J].
DELEEUW, DM ;
LOUS, EJ .
SYNTHETIC METALS, 1994, 65 (01) :45-53
[4]   ORGANIC TRANSISTORS - 2-DIMENSIONAL TRANSPORT AND IMPROVED ELECTRICAL CHARACTERISTICS [J].
DODABALAPUR, A ;
TORSI, L ;
KATZ, HE .
SCIENCE, 1995, 268 (5208) :270-271
[5]   ALL-POLYMER FIELD-EFFECT TRANSISTOR REALIZED BY PRINTING TECHNIQUES [J].
GARNIER, F ;
HAJLAOUI, R ;
YASSAR, A ;
SRIVASTAVA, P .
SCIENCE, 1994, 265 (5179) :1684-1686
[6]  
GARNIER F, 1992, SPRINGER SERIES SOLI
[7]   CONDUCTIVITY AND SUPERCONDUCTIVITY IN POLYMERS [J].
GOODINGS, EP .
CHEMICAL SOCIETY REVIEWS, 1976, 5 (01) :95-123
[8]  
GRASSELI JG, 1973, ATLAS SPECTRUM DATA
[9]  
KIESS HG, 1992, SPRINGER SERIES SOLI, V102
[10]  
KISPERT LD, 1983, J CHEM PHYS, V75, P4858