Single-electrode triboelectric nanogenerators (SETENGs) significantly expand the application of triboelectric nanogenerators in various circumstances, such as touch-pad technologies. In this work, a theoretical model of SETENGs is presented with in-depth interpretation and analysis of their working principle. Electrostatic shield effect from the primary electrode is the main consideration in the design of such SETENGs. On the basis of this analysis, the impacts of two important structural parameters, that is, the electrode gap distance and the area size, on the output performance are theoretically investigated. An optimized electrode gap distance and an optimized area size are observed to provide a maximum transit output power. Parallel connection of multiple SETENGs with micro-scale size and relatively larger spacing should be utilized as the scaling-up strategy. The discussion of the basic working principle and the influence of structural parameters on the whole performance of the device can serve as an important guidance for rational design of the device structure towards the optimum output in specific applications.
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Niu, Simiao
;
Wang, Sihong
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Wang, Sihong
;
Lin, Long
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Lin, Long
;
Liu, Ying
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Liu, Ying
;
Zhou, Yu Sheng
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Zhou, Yu Sheng
;
Hu, Youfan
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Hu, Youfan
;
Wang, Zhong Lin
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Natl Inst Mat Sci, Satellite Res Facil, MANA, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, JapanGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Niu, Simiao
;
Wang, Sihong
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Wang, Sihong
;
Lin, Long
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Lin, Long
;
Liu, Ying
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Liu, Ying
;
Zhou, Yu Sheng
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Zhou, Yu Sheng
;
Hu, Youfan
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Hu, Youfan
;
Wang, Zhong Lin
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Natl Inst Mat Sci, Satellite Res Facil, MANA, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, JapanGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA