Lithographic approach to pattern self-assembled nanoparticle multilayers

被引：61

作者：

Hua, F ^{[1
]}

Cui, TH ^{[1
]}

Lvov, Y ^{[1
]}

机构：

[1] Louisiana Tech Univ, Inst Micromfg, Ruston, LA 71270 USA

来源：

LANGMUIR | 2002年 / 18卷 / 17期

关键词：

D O I：

10.1021/la025856r

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A study of lithographic approach to pattern self-assembled nanoparticle multilayers was carried out using silicon-based lithographical technology. The advantages of the method include a simpler process with micron feature size and very good reproducibility and also can be applied to almost all charged nanoscale building blocks. The results showed that this method provides a technology for nanodevices such as nanoelectronic chips or NEMS, which have a variety of potential applications.

引用

页码：6712 / 6715

页数：4

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