Piezoelectric properties of PZT: Influence of (Zr/Ti) ratio and niobium substitution

被引：5

作者：

Haccart, T ^{[1
]}

Soyer, C ^{[1
]}

Cattan, E ^{[1
]}

Remiens, D ^{[1
]}

机构：

[1] Univ Valenciennes & Hainaut Cambresis, LAMAC, F-59600 Maubeuge, France

来源：

FERROELECTRICS | 2001年 / 254卷 / 1-4期

关键词：

r.f.sputtering; Pb(ZrxTi1-x)O-3; various Zr/Ti; Nb doped; dielectric; ferroelectric; piezoelectric;

D O I：

10.1080/00150190108214999

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pb(Zr,Ti)O-3 (PZT) and Pb(ZrTi,Nb)O-3 (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. PZT films with various Zr/Ti compositions ranging from 15/85 to 70/30 were grown; for PNZT films (the ratio Zr/Ti is fixed to 54/46) the Niobium concentration varied from 1 to 7 at.% by increment of 1 at.%. The main objective of this work is to determine the effects of the Zr/Ti ratio and the Nb concentration on the electrical properties of PZT thin films. The dielectric, ferroelectric and piezoelectric properties of the films were systematically evaluated. In particular, the piezoelectric properties were very sensitive to the Nb substitution and the Zr/Ti ratio.

引用

页码：185 / 195

页数：11

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