Hydrogen treatment for polycrystalline nitrogen-doped Cu2O thin film

The effects of hydrogen treatment for polycrystalline nitrogen-doped cuprous oxide (Cu2O) thin films on their electrical and optical properties were studied. Although the emission was not observed before the treatment by hydrogen plasma, near band edge emission of Cu2O at around 680 nm was observed after the treatment. This result indicates that the non-radiative recombination centers possibly existing on and in polycrystalline grains are passivated by hydrogen. The hole density was controlled from the order of cm(-3) by hydrogen treatment. The control of the hole density in such a range was achieved for the first time. From these results. hydrogen treatment was found to be very effective to passivate defects and improve electrical and optical properties of polycrystalline Cu2O. (C) 2002 Elsevier Science B.V. All rights reserved.