Patterning, Characterization, and Chemical Sensing Applications of Graphene Nanoribbon Arrays Down to 5 nm Using Helium Ion Beam Lithography

被引:210
作者
Abbas, Ahmad N. [1 ,3 ]
Liu, Gang [1 ]
Liu, Bilu [1 ]
Zhang, Luyao [1 ]
Liu, He [1 ]
Ohlberg, Douglas [2 ]
Wu, Wei [1 ]
Zhou, Chongwu [1 ]
机构
[1] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA
[2] Hewlett Packard Corp, Intelligent Infrastruct Lab, HP Labs, Palo Alto, CA 94304 USA
[3] King Abdulaziz Univ, Dept Elect Engn, Jeddah 22254, Saudi Arabia
关键词
graphene nanoribbon; array; helium ion beam lithography; field-effect transistor; BAND-GAP; RAMAN-SPECTROSCOPY; CARBON NANOTUBES; HIGH-QUALITY; TRANSISTORS; FABRICATION; TRANSPORT; MOLECULES; STATES; EDGES;
D O I
10.1021/nn405759v
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to create a bandgap in graphene and function as a semiconducting switch. Although GNRs with widths of <10 nm have been achieved, problems like GNR alignment, width control, uniformity, high aspect ratios, and edge roughness must be resolved in order to introduce GNRs as a robust alternative technology. Here we report patterning, characterization, and superior chemical sensing of ultranarrow aligned GNR arrays down to 5 nm width using helium ion beam lithography (HIBL) for the first time. The patterned GNR arrays possess narrow and adjustable widths, high aspect ratios, and relatively high quality. Field-effect transistors were fabricated on such GNR arrays and temperature-dependent transport measurements show the thermally activated carrier transport in the GNR array structure. Furthermore, we have demonstrated exceptional NO2 gas sensitivity of the 5 nm GNR array devices down to parts per billion (ppb) levels. The results show the potential of HIBL fabricated GNRs for the electronic and sensing applications.
引用
收藏
页码:1538 / 1546
页数:9
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