Observation of native Ga vacancies in GaN by positron annihilation

被引：462

作者：

Saarinen, K

Laine, T

Kuisma, S

Nissila, J

Hautojarvi, P

Dobrzynski, L

Baranowski, JM

Pakula, K

Stepniewski, R

Wojdak, M

Wysmolek, A

Suski, T

Leszczynski, M

Grzegory, I

Porowski, S

机构：

[1] WARSAW UNIV BRANCH,INST PHYS,PL-15424 BIALYSTOK,POLAND

[2] SOLTAN INST NUCL STUDIES,PL-05400 OTWOCK,POLAND

[3] UNIV WARSAW,INST EXPT PHYS,PL-00681 WARSAW,POLAND

[4] POLISH ACAD SCI,HIGH PRESSURE RES CTR,UNIPRESS,PL-01142 WARSAW,POLAND

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.79.3030

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Positron annihilation experiments were performed to identify native point defects in n-type GaN bulk crystals as well as in epitaxial layers. The results show that Ga vacancies are present at concentrations 10(17)-10(18) cm(-3) in both GaN bulk crystals and layers. The Ga vacancies are negatively charged, and their concentration correlates with the intensity of the yellow luminescence. We conclude that the Ga vacancies contribute to the electrical compensation of n-type GaN and that their acceptor levels are involved in the yellow luminescence transition.

引用

页码：3030 / 3033

页数：4

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