Spin-dephasing processes in semiconductor quantum dots

被引:17
作者
Khaetskii, AV
Nazarov, YV
机构
[1] Delft Univ Technol, Fac Appl Phys, NL-2628 CJ Delft, Netherlands
[2] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands
来源
PHYSICA E | 2000年 / 6卷 / 1-4期
关键词
spin relaxation; quantum dots; phonons;
D O I
10.1016/S1386-9477(99)00221-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have studied the physical processes responsible for the spin-flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation of the electron both with and without a magnetic field. It is generally observed that the corresponding spin-flip rates are by several orders of magnitude lower than those for the spin-flip processes for free 2D electrons (i.e. in the case when there is no confinement in the plane). We have shown that it is due to the zero-dimensional character of the problem (electron wave functions are localized in all directions) which leads to freezing out of the most effective spin-flip mechanisms related to the absence of the inversion centers in the elementary crystal cell and on the heterointerface. (C) 2000 Elsevier Science B.V, All rights reserved.
引用
收藏
页码:470 / 473
页数:4
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