A 80-100 GHz image-reject passive-HEMT mixer

被引:7
作者
Archer, John W. [1 ]
机构
[1] CSIRO ICT Ctr, Epping, NSW 1710, Australia
关键词
millimeter-wave; mixer; gallium arsenide; MMIC; single-sideband;
D O I
10.1002/mop.21953
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a single-sideband, subharmonically pumped, passive-HEMT integrated circuit mixer developed for use in transceivers for point-to-point telecommunications in the 83-87 GHz band. The gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) can readily be fabricated using a standard commercial process. The mixer performs equally well for either up- or down- conversion. For RF signals in the range 80-100 GHz., the conversion loss is typically 20 dB with LO drive in the range 40-50 GHz. Under these conditions, high rejection of the undesired sideband (> 18 dB), relative to the desired signal, is achieved. For up-conversion, I dB compression of the mixer gain typically occurs at -12 dBm RF output power. (c) 2006 Wiley Periodicals, Inc.
引用
收藏
页码:2429 / 2433
页数:5
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