The development of drift-strip detectors based on CdZnTe

被引:9
作者
Gostilo, V [1 ]
Budtz-Jorgensen, C
Kuvvetli, I
Gryaznov, D
Lisjutin, I
Loupilov, A
机构
[1] Baltic Sci Instruments, LV-1005 Riga, Latvia
[2] Danish Space Res Inst, DK-1012 Copenhagen, Denmark
关键词
CdZnTe; space application; strip detector; X- and gamma-ray registration;
D O I
10.1109/TNS.2002.803857
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The design and technological development of a CdZnTe drift strip detector is described. The device is based on a monocrystal of dimensions 10 x 10 x 3 mm(3) and has a pitch of 200 mum and a strip width of 100 mum. The strip length is 9.5 mm. The distribution of the leakage currents of the strips as well as distribution of interstrip resistances are presented. The full-width at half-maximum (FWHM) energy resolution at energies of 59.5 and 661 keV was 1.9 and 12 keV, respectively. At high energies, the resolution was found to be limited by the transport properties of the charge carriers.
引用
收藏
页码:2530 / 2534
页数:5
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