Origin of nonlinear surface impedance and intermodulation distortion in YBa2Cu3O7-x microstrip resonator

被引:12
作者
Hoshizaki, H [1 ]
Sakakibara, N [1 ]
Ueno, Y [1 ]
机构
[1] Adv Mobile Telecommun Technol Inc, Aichi 4700111, Japan
关键词
D O I
10.1063/1.371594
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present measurements of the nonlinear surface impedance Z(s) and the third-order intermodulation distortion (IMD) of a YBa2Cu3O7-x microstrip resonator, which is initially in the as-processed state and subsequently annealed at 450-600 degrees C. Z(s) of the as-processed sample in the high-dissipated-power range is explained in terms of the vortices in weak links. In the low-dissipated-power range, outputs of IMD are changed by annealing the resonator, and the minimum IMD generation is obtained with a sample annealed at 500 degrees C. By comparing the IMD generation of the samples with the crystalline structure measured by x-ray diffraction and transmission electron microscopy, it is shown that IMD of the YBa2Cu3O7-x film is generated at lattice distortions of the a-b plane in grains and grain boundaries. (C) 1999 American Institute of Physics. [S0021-8979(99)04622-8].
引用
收藏
页码:5788 / 5793
页数:6
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