Fabrication and characterization of CuIn(SxSe1-x)(2) thin films deposited by rf sputtering

Thin films of CuIn(SxSe1-x)(2) were prepared by r.f. sputtering from powder targets which were previously mixed from powdered binary compounds. X-ray diffraction analyses showed the films had the single phase chalcopyrite structure, and the lattice parameters (a and c) varied linearly with the increase in sulphur content x from x=0 (CuInSe2) to x=1 (CuInS2). The orientation to the (112) plane of the CuIn(SxSe1-x)(2) thin films increases as the sulphur content x increases. From scanning electron microscope images, the grain sizes in the films were found to decrease with the decrease in sulphur content. Optical transmittance measurements showed that bowing behaviour is not observed in the films.