Polymer diodes with high rectification

被引:94
作者
Roman, LS [1 ]
Berggren, M
Inganäs, O
机构
[1] Linkoping Univ, Dept Phys, Appl Phys Lab, S-58183 Linkoping, Sweden
[2] Linkoping Univ, ITN, S-60174 Norrkoping, Sweden
关键词
D O I
10.1063/1.125387
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polymer diodes made using a bilayer of doped poly(3,4-ethylenedioxythiophene) and a semiconducting polymer in a sandwich structure with two low-work-function metals are reported. The conducting polymer layer acted as a modifier of the injection properties of the low-work-function metal, allowing easy hole injection. Upon insertion of the conducting polymer layer, the contact-limited current flow became bulk limited. With this anode, the fabrication of diodes with a rectification ratio of seven orders of magnitude was possible. We present patterned microdiodes made with crossing of 10 mu m lines, showing similar performance as the mm-size diode. (C) 1999 American Institute of Physics. [S0003-6951(99)04748-8].
引用
收藏
页码:3557 / 3559
页数:3
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