Composition and reconstruction of the GaP{100}-(4x2) surface

被引:12
作者
Sung, MM [1 ]
Rabalais, JW [1 ]
机构
[1] UNIV HOUSTON,DEPT CHEM,HOUSTON,TX 77204
基金
美国国家科学基金会;
关键词
computer simulations; gallium phosphide; ion-solid interactions; scattering; channeling; low energy ion scattering (LEIS); low index single crystal surfaces; semiconducting films; surface relaxation and reconstruction; surface structure; morphology; roughness; and topography;
D O I
10.1016/0039-6028(96)00680-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The composition and reconstruction of the GaP{100}-(4 x 2) surface has been studied by time-of-flight scattering and recoiling spectrometry (TOF-SARS) and low energy electron diffraction (LEED). Time-of-filight spectra of scattered and recoiled neutrals plus ions were collected as a function of crystal azimuthal rotation angle delta and primary beam incident (polar) angle alpha. Compositional analysis of the surface was obtained from 4 keV Ne+ scattering and recoiling spectra. Structural analysis was obtained from the azimuthal anisotropy of the delta-scans and the features of the alpha-scans using both 4 keV Ne+ and Kr+ for scattering and recoiling. The azimuthal delta-scans were simulated by means of a shadow cone focusing model and a classical ion trajectory model. The totality of this data shows that the (4 x 2) reconstruction of GaP is a Ga missing-row-trimer P dimer (MRTD) structure in which every fourth Ga[0(1) over bar1$] row is missing, the Ga atoms are trimerized along the [011] azimuth, and the 2nd-layer P atoms exposed in the [0(1) over bar1$] troughs are dimerized. This MRTD model is consistent with all of the data, is autocompensated, and has Ga intratrimer spacings of 3.2 +/- 0.2 Angstrom and P intradimer spacings of 2.7 +/- 0.2 Angstrom. The results of the simulations suggest that the two end Ga atoms of the trimers are relaxed downward by a minimum of 0.2 Angstrom. A missing-row-dimer (MRD) model, similar to that proposed for the GaAs (4 x 2) structure, in which every fourth Ga <011) row is missing and Ga dimers form along [011], was also considered. This MRD model is inconsistent with large portions of the experimental data and the simulations. The results are discussed in terms of the differences in the chemical bonds of phosphorus and arsenic.
引用
收藏
页码:136 / 148
页数:13
相关论文
共 53 条
[1]   THE AS-TERMINATED RECONSTRUCTIONS FORMED BY GAAS(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (2X4) AND C(4X4) SURFACES [J].
AVERY, AR ;
HOLMES, DM ;
SUDIJONO, J ;
JONES, TS ;
JOYCE, BA .
SURFACE SCIENCE, 1995, 323 (1-2) :91-101
[2]   SURFACE-STRUCTURE OF (100) GAP GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
BAILLARGEON, JN ;
CHENG, KY ;
HSIEH, KC .
APPLIED PHYSICS LETTERS, 1990, 56 (22) :2201-2203
[3]  
Batsanov S., 1991, Russian journal of inorganic chemistry, V36, P1694
[4]   X-RAY-PHOTOELECTRON-DIFFRACTION STUDY OF INAS/INP(001) HETEROSTRUCTURES [J].
BERGIGNAT, E ;
GENDRY, M ;
HOLLINGER, G ;
GRENET, G .
PHYSICAL REVIEW B, 1994, 49 (19) :13542-13553
[5]  
BIEGLSEN DK, 1991, PHYS REV B, V41, P5701
[6]   ATOM-RESOLVED IMAGING AND SPECTROSCOPY ON THE GAAS(001) SURFACE USING TUNNELING MICROSCOPY [J].
BRESSLERHILL, V ;
WASSERMEIER, M ;
POND, K ;
MABOUDIAN, R ;
BRIGGS, GAD ;
PETROFF, PM ;
WEINBERG, WH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1881-1885
[7]   DEEP LEVELS AND BAND BENDING AT GAP(100) AND GAP(110) SURFACES [J].
BRILLSON, LJ ;
VITOMIROV, I ;
RAISANEN, AD ;
CHANG, S ;
LIN, CL ;
MCINTURFF, DT ;
KIRCHNER, PD ;
WOODALL, JM .
SURFACE SCIENCE, 1994, 307 :303-308
[9]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[10]   ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837