Influence of conditions of r.f. sputtering on chemical constitution and structure of PZT-type thin films

By means of r.f. sputtering the polycrystalline Pb(Zr0.53Ti0.45W0.01Cd0.01)O-3 ferroelectric thin films of d(f) = (0.5 - 10) mu m in thickness have been obtained. A disk ceramics obtained by hot pressing method or a layer of powdered ceramic samples was used as a target. On the basis of structure analysis by X-ray diffraction conditions which are necessary for obtaining thin ferroelectric, stoichiometric films having a perovskite-type structure have been determined. Regions of amorphous film deposition, pyrochlore-type structure or mixture of pyrochlore-type and perovskite-type structure are also presented in diagram "working gas pressure versus substrate temperature" (p(O2) - T-s). New experimental data on pyrochlore-type structure metastability and its conversion into perovskite-type structure caused by thermal treatment are obtained.