Effects of impurities on the optical properties of poly-3-hexylthiophene thin films

被引：39

作者：

Erwin, MM ^{[1
]}

McBride, J ^{[1
]}

Kadavanich, AV ^{[1
]}

Rosenthal, SJ ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Chem, Nashville, TN 37235 USA

来源：

THIN SOLID FILMS | 2002年 / 409卷 / 02期

基金：

美国国家科学基金会;

关键词：

polymers; impurities; Rutherford back scattering spectroscopy (RBS); optical spectroscopy;

D O I：

10.1016/S0040-6090(02)00124-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Commercial poly-3-hexylthiophene was used to create thin films, which were analyzed to determine density, the dependence of the optical absorption on film thickness and the effects of impurities on the optical properties of the polymer. Rutherford backscattering spectroscopy (RBS) demonstrated Zn and Br impurities in the films, which could be removed with methanol extraction. These impurities affect the optical properties of the polymer. Film thicknesses were measured using atomic force microscopy, and in combination with the RBS data, the density of the polymer film was ascertained to be 1.33 +/- 0.07 g/cm(3). The dependence of the polymer absorbance on the film thickness is well modeled by the linear function T = (136.8 +/- 2.4) x (A((lambdamax))) + (6.9 +/- 2.0), where T is the film thickness and A((lambdamax)) is the absorbance maximum. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：198 / 205

页数：8

共 35 条

[1]

[Anonymous], 1995, Handbook of Modern Ion Beam Material Analysis

[2] Temperature- and field-dependent electron and hole mobilities in polymer light-emitting diodes [J].