Ferroelectric-based functional pass-gate for low-power VLSI

被引：2

作者：

Kimura, H ^{[1
]}

Hanyu, T ^{[1
]}

Kameyama, M ^{[1
]}

Fujimori, Y ^{[1
]}

Nakamura, T ^{[1
]}

Takasu, H ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Informat Sci, Sendai, Miyagi 9808579, Japan

来源：

2002 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIC.2002.1015082

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A ferroelectric-based functional pass-gate is proposed for low-power logic-in-memory VLSI which makes communication bottleneck free. Since non-destructive storage and switching functions are merged into a, ferroelectric capacitor, active-device counts become small, which reduces the dynamic power dissipation. The use of ferroelectric-based non-volatile storage makes leakage currents cut off. Applying the ferroelectric-based circuitry to binary CAM implementation results in about half dynamic power reduction and 1/22000 static power reduction, compared to a CMOS implementation under 0.6mum ferroelectric/CMOS.

引用

页码：196 / 199

页数：4